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 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6820
(MSASC75W100F)
Features
* * * * * *
Tungsten schottky barrier for low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance * Very low thermal resistance * Available as standard polarity (strap is anode: 1N6820) and reverse polarity (strap is cathode: 1N6820R)
PRELIMINARY
1N6820R
100 Volts 75 Amps
SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg JC MAX. 45 45 45 75 4 500 2 -55 to +150 -55 to +150 0.50 0.65
(MSASC75W100FR)
Maximum Ratings @ 25 (unless otherwise specified) C
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 125 C derating, forward current, Tc 125 C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6820 1N6820R
LOW REVERSE LEAKAGE SCHOTTKY DIODE
UNIT Volts Volts Volts Amps Amps/ C Amps Amp C C C/W
Mechanical Outline
ThinKeyTM 4
Datasheet# MSC1031A
1N6820 (MSASC75W100F) 1N6820R (MSASC75W100FR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL IR25 IR125-1 IR125-2 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 VF11 VF12 VF13 VF14 VF15 VF16 VFa VFb VFc Cj1 Cj2 BVR CONDITIONS VR= 100 Vdc, Tc= 25 C VR= 24 Vdc, Tc= 125 C VR= 80 Vdc, Tc= 125 C VR= 100 Vdc, Tc= 125 C IF= 2 A, Tc= 25 C IF= 10 A, Tc= 25 C IF= 25 A, Tc= 25 C IF= 50 A, Tc= 25 C IF= 75 A, Tc= 25 C IF= 100 A, Tc= 25 C IF= 2 A, Tc= -55 C IF= 10 A, Tc= -55 C IF= 25 A, Tc= -55 C IF= 50 A, Tc= -55 C IF= 75 A, Tc= -55 C IF= 2 A, Tc= 125 C IF= 10 A, Tc= 125 C IF= 25 A, Tc= 125 C IF= 50 A, Tc= 125 C IF= 75 A, Tc= 125 C IF= 100 mA, Tc= 25 C IF= 100 mA, Tc= 125 C IF= 100 mA, Tc= -55 C VR= 10 Vdc VR= 5 Vdc IR= 5 mA, Tc= 25 C IR= 5 mA, Tc= -55 C MIN TYP. 10 1.25 2.5 4 450 590 710 790 840 875 555 645 760 900 1020 340 495 585 655 700 350 200 480 1100 1400 115 110 MAX 500 50 650 780 920 710 840 1100 550 660 780 1600 UNIT uA mA mA mA mV mV mV mV mV mV mV MV MV MV mV MV MV MV MV mV mV mV mV pF pF V V
Junction Capacitance Breakdown Voltage
100
1.200 1.000 0.800 0.600 0.400 0.200 0.000 1 10 100 IF(A) 1000
-55C +25C +125C
VF(V)


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